PART |
Description |
Maker |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
CXK5V16100TM-10LLX CXK5V16100TM-85LLX |
65536-word x 16-bit High Speed CMOS Static RAM 65536-word X 16-bit High Speed CMOS Static RAM
|
SONY
|
HM6287P-45 HM6287P-55 HM6287LP-45 HM6287LP-55 HM62 |
65536-word x 1-bit Speed CMOS Static RMA
|
http:// HITACHI[Hitachi Semiconductor]
|
TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
TC531024F-15 TC531024P-12 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
|
M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram 65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M51R16AWG-10LI D98010 M5M51R16AWG-15LI M5M51R16A |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32 128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32 131072-word x 8-bit High Speed CMOS Static RAM 131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp. SONY
|
MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|